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| DATA SHEET DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK231 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES * Low Noise Figure * High Power Gain * Enhancement Typ. * Suitable for use as RF amplifier in UHF TV tuner. * Automatically Mounting : Embossed Type Taping (1.8) 0.85 0.95 NF = 2.0 dB TYP. (@ = 900 MHz) Gps = 17.5 dB TYP. (@ = 900 MHz) PACKAGE DIMENSIONS (Unit: mm) 0.4 -0.05 0.4 -0.05 0.4 -0.05 0.16 -0.06 +0.1 2.8 -0.3 1.5 2 +0.2 +0.1 +0.1 +0.2 -0.1 * Small Package : 4 Pins Mini Mold Package. (SC-61) 2.90.2 3 4 5 0 to 0.1 5 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Gate1 to Drain Voltage Gate2 to Drain Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature *RL 10 k VDSX VG1S VG2S VG1D VG2D ID PD Tch Tstg 18 V 0.6 -0.05 8 (10)* 8 (10)* 18 18 25 200 125 +0.1 V +0.2 -3.1 5 V V mA mW 1.1 0.8 55 to +125 C C 5 PIN CONNECTIONS 1. Source 2. Drain 3. Gate 2 4. Gate 1 PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltages or fields. Document No. P10588EJ2V0DS00 (2nd edition) (Previous No. TC-2283) Date Published March 1997 N Printed in Japan (c) +0.1 V 1 (1.9) 1993 3SK231 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Drain to Source Breakdown Voltage Drain Current Gate1 to Source Cutoff Voltage Gate2 to Source Cutoff Voltage Gate1 Reverse Current Gate2 Reverse Current Forward Transfer Admittance SYMBOL BVDSX IDSx VG1S(off) VG2S(off) IG1SS IG2SS MIN. 18 0.01 10.0 +1.0 +1.1 +1.6 TYP. MAX. UNIT V mA V V nA nA mS TEST CONDITIONS VG1S = VG2S = 2 V, ID = 10 A VDS = 6 V, VG2S = 4.5 V, VG1S = 0.75 V VDS = 6 V, VG2S = 3 V, ID = 10 A VDS = 6 V VG1S = 3 V, ID = 10 A VDS = VG2S = 0 V, VG1S = 8 V VDS = VG1S = 0 V, VG2S = 8 V VDS = 6 V, VG2S = 4.5 V, ID = 10 mA f = 1 kHz Input Capacitance Output Capacitance Reverse Transfer Capacitance Power Gain Noise Figure Ciss Coss Crss Gps NF1 14.0 1.0 0.7 1.5 1.0 0.015 17.5 2.0 2.0 1.3 0.03 21.0 3.0 pF pF pF dB dB VDS = 6 V, VG2S = 4.5 V, ID = 10 mA f = 900 MHz VDS = 6 V, VG2S = 4.5 V, ID = 10 mA f = 1 MHz 1.0 +0.6 20 20 15 19.5 24 yfs IDSX Classification Rank Marking IDSX (mA) U1C U1C 0.01 to 4.0 U1D U1D 2.0 to 10.0 2 3SK231 CHARACTERISTICS CURVE (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT-Total Power Dissipation-mW Free Air 400 ID-Drain Current-mA 40 30 20 10 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 50 VG2S = 4.5 V VG1S = 3 V 2.5V 2.0V 1.5V 1.0V 0.5V 0 25 50 75 100 125 0 5 VDS-Drain to Source Voltage-V FORWARD TRANSFER ADMITTANCE vs. GATE1 TO SOURCE VOLTAGE |yfs|-Forward Transfer Admittance-mS 25 20 15 10 5 0 -1 2V 3V VDS = 6 V f = 1 KHz VG2S = 5 V 10 300 200 100 TA-Ambient Temperature-C DRAIN CURRENT vs. GATE1 TO SOURCE VOLTAGE 25 ID-Drain Current-mA 20 15 10 2.0 V 5 1.5 V 0 -1 0 1 2 3 4 VDS = 6 V VG2S = 3.5 V 3.0 V 2.5 V 4V 0 1 2 3 4 VG1S-Gate1 to Source Voltage-V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 2.5 |yfs|-Forward Transfer Admittance-mS 40 32 24 16 8 0 2V 8 VG2S = 6 V 5V 4V 3V VDS = 6 V f = 1 KHz 5V Ciss-Input Capacitance-pF VG1S-Gate1 to Source Voltage-V INPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE ID = 10 mA (at VDS = 6 V 2.0 VG2S = 4.5 V) f = 1 MHz 1.5 1.0 0.5 4 12 16 20 0 1.0 2.0 3.0 4.0 5.0 ID-Drain Current-mA VG2S-Gate2 to Source Voltage-V 3 3SK231 OUTPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE 2.5 ID = 10 mA (at VDS = 6 V 2.0 VG2S = 4.5 V) f = 1 MHz 1.5 10 POWER GAIN AND NOISE FIGURE vs. GATE2 TO SOURCE VOLTAGE f = 900 MHz 20 ID = 10 mA (at VDS = 6 V VG2S = 4.5 V) 10 Gps Coss-Output Capacitance-pF NF-Noise Figure-dB Gps-Power Gain-dB 5 0 1.0 -10 -20 0.5 NF 0 1.0 2.0 3.0 4.0 5.0 0 0 1.0 2.0 3.0 4.0 5.0 VG2S-Gate2 to Source Voltage-V VG2S-Gate2 to Source Voltage-V 4 3SK231 Gps AND NF TEST CIRCUIT AT f = 900 MHz VG2S (3 V) 1000 pF 47 k 1000 pF to 10 pF to 10 pF INPUT 50 to 10 pF to 10 pF L1 47 k RFC L2 OUTPUT 50 1000 pF 1000 pF L1, L2; 35 x 5 x 0.2 mm VDD (6 V) VG1S 5 3SK231 [MEMO] 6 3SK231 [MEMO] 7 3SK231 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5 |
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